Evidence of chlorine ion penetration in InP/InAsP quantum well structures during dry etching processes and effects of induced-defects on the electronic and structural behaviour
نویسندگان
چکیده
a Institut de Physique de Rennes, CNRS-UMR 6251, Université Rennes 1, F-35042 Rennes, France b UMR FOTON, CNRS, INSA-Rennes, F-35708 Rennes, France c GdS Optronlab, Dpto. Fisica de la Materia Condensada, Universidad de Valladolid, 47011 Valladolid, Spain d III-V Lab, Route de Nozay, F-91461 Marcoussis, France e OSUR, Plateforme NanoSIMS, Université Rennes 1, 35042 Rennes, France f Istituto CNR-IMEM, 43010 Parma, Italy g Institut des Matériaux Jean-Rouxel, CNRS-UMR 6502, Université Nantes 1, F-44322 Nantes, France
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ورودعنوان ژورنال:
- Microelectronics Reliability
دوره 55 شماره
صفحات -
تاریخ انتشار 2015